深圳市联翔电子有限公司

Features

256K bit Ferroelectric Nonvolatile RAM

Organized as 32,768 x 8 bits

High Endurance 100 Trillion (1014) Read/Writes

38 year Data Retention (@+75oC)

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

Up to 1 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation

Wide Voltage Operation 2.7V-5.5V

100AActive Current (100 kHz)

15AStandby Current (typ.)

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Packages.