深圳市联翔电子有限公司

Features

256K bit Ferroelectric Nonvolatile RAM

Organized as 32,768 x 8 bitsHigh Endurance 100 Trillion (1014) Read/Writes38 year Data Retention (@+75oC)NoDelay™ WritesAdvanced High-Reliability Ferroelectric ProcessFast Two-wire Serial InterfaceUp to 1 MHz maximum bus frequencyDirect hardware replacement for EEPROMSupports legacy timing for 100 kHz & 400 kHzLow Power OperationWide Voltage Operation 2.7V-5.5V100AActive Current (100 kHz)15AStandby Current (typ.)Industry Standard ConfigurationIndustrial Temperature -40 C to +85 C8-pin “Green”/RoHS SOIC Packages.